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SEMI International Standards
Standards Locale: North America
Committee: Silicon Wafer
Place of Meeting: Intel, Santa Clara, CA
Date of Meeting: 10/25/2011
Meeting End Date: 10/25/2011
Recording SEMI Standards Staff: Kevin Nguyen
CER Posted to Web: 11/02/2011
Leadership Changes

Group
Previous Leader
New Leader
NA Silicon Wafer CommitteeMike Goldstein (Intel) is the new vice-chair.


TC Chapter Structure Changes
None.

Ballot Results
Passed ballots and line items will be submitted to the ISC Audit & Review Subcommittee for procedural review.
Failed ballots and line items were returned to the originating task forces for re-work and re-balloting.
Document #
Document Title
Committee Action
A&R Forms for Approved Ballots
5085
Revision of SEMI MF374-0307, Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration ProcedurePassed as balloted5085ProcedureReview.pdf
5086
Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe Passed as balloted5086ProcedureReview.pdf
5300
Revision of SEMI M8-0307, Specification for Polished Monocrystalline Silicon Test WafersPassed as balloted5300ProcedureReview.pdf
5301
Reapproval of SEMI M32-0307, Guide to Statistical SpecificationsPassed as balloted5301ProcedureReview.pdf
5302
Revision of SEMI M38-0307, Specification for Polished Reclaimed Silicon WafersPassed as balloted5302ProcedureReview.pdf
5303
Reapproval of SEMI M56-0307, Practice for Determining Cost Components for Metrology Equipment Due to Measurement Variability and BiasPassed as balloted5303ProcedureReview.pdf
5304
Revision of SEMI MF84-0307, Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point ProbePassed as balloted5304ProcedureReview.pdf
5305
Revision of SEMI MF671-0707, Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic MaterialsPassed as balloted5305ProcedureReview.pdf
5306
Revision of SEMI MF672-0307, Guide for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance ProbePassed as balloted5306ProcedureReview.pdf
5307
Reapproval of SEMI MF723-0307E, Practice for Conversion Between Resistivity and Dopant or Carrier Density for Boron-Doped, Phosphorous-Doped, and Arsenic-Doped SiliconPassed as balloted5307ProcedureReview.pdf
5308
Reapproval of SEMI MF1388-0707, Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) CapacitorsPassed as balloted5308ProcedureReview.pdf
5309
Reapproval of SEMI MF1390-0707, Test Method for Measuring Warp on Silicon Wafers by Automated Non-Contact ScanningPassed as balloted5309ProcedureReview.pdf
5310
Reapproval of SEMI MF1392-0307, Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury ProbePassed as balloted5310ProcedureReview.pdf
5311
Reapproval of SEMI MF1451-0707, Test Method for Measuring Sori on Silicon Wafers by Automated Non-Contact ScanningPassed as balloted5311ProcedureReview.pdf
5312
Revision of SEMI MF1527-0307, Guide for Application of Certified Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of SiliconPassed as balloted5312ProcedureReview.pdf
5313
Reapproval of SEMI MF1535-0707, Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave ReflectanceFailed and returned to task force for rework and reballot
5313Failed.pdf
5314
Reapproval of SEMI MF1569-0307, Guide for Generation of Consensus Reference Materials for Semiconductor TechnologyPassed as balloted
5314ProcedureReview.pdf
5315
Reapproval SEMI MF1530-0707, Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafers by Automated Non-Contact ScanningPassed as balloted5315ProcedureReview.pdf


Ratification Ballot Results
None.

Activities Approved by the GCS between meetings of TC Chapter meeting
None.

Authorized Activities

#
Type
SC/TF/WG
Details
5344SNARFAdvanced Wafer Geometry TFNew Standard: Test Method for Non-Contact Wafer Diameter Measurement
5343SNARFAdvanced Wafer Geometry TFRevision to M49, Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 22 nm Technology Generations (To include Edge Profile Metrics)
5342SNARFEpitaxial Wafer TFRevision to M62-1011 Specifications for Silicon Epitaxial Wafers (Addition of 450 mm wafer to Table R2-8 Epi wafer guide for 22nm technology Generation)


Authorized Ballots
None.

SNARF(s) Granted a One-Year Extension
None.

SNARF(s) Cancelled
None.

Standard(s) to receive Inactive Status
None.

Special Announcements of the Committee (Workshops, Programs, etc.)
A Standards Technical Education Program (STEP) on 450 mm Wafer is planned at SEMICON Japan in December 9, 2011. For details, click here to REGISTER

Next Meeting
In conjunction with NA Spring Meeting, April 2-6, 2012 at SEMI HQ, San Jose, CA. Check www.semi.org/standards for the latest schedule update








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