SEMI
  HOME
SEMI International Standards
Standards Locale: Japan
Committee: Silicon Wafer
Place of Meeting: Makuhari Messe, Chiba
Date of Meeting: 12/06/2012
Meeting End Date: 12/06/2012
Recording SEMI Standards Staff: Hirofumi Kanno
CER Posted to Web: 12/21/2012
Leadership Changes

Group
Previous Leader
New Leader
Japan Test Method Task ForceRyuji Takeda / Covalent Silicon
Tsuyoshi Otsuki / Shin-Etsu Handotai
Yoshimi Shiramizu / Renesus Electronics


TC Chapter Structure Changes
None.

Ballot Results

Passed ballots and line items will be submitted to the ISC Audit & Review Subcommittee for procedural review.
Failed ballots and line items were returned to the originating task forces for re-work and re-balloting.
Document #
Document Title
Committee Action
A&R Forms for Approved Ballots
5252ARevision of SEMI M57-1011 with Title Change To: Specifications for Silicon Annealed WafersPassed with editorial changes5252A_Ballot Review Sheet_r1.pdf5252A_Ballot Review Sheet_r1.pdf
5442Reapproval of SEMI M74-1108, Specification for 450 mm Diameter Mechanical Handling Polished WafersPassed as balloted (Super clean)5442_Ballot Review Sheet(Reapproval).pdf5442_Ballot Review Sheet(Reapproval).pdf
5441Line Items Revision of SEMI M1-0812, Specifications for Polished Single Crystal Silicon WafersSee below.5441_Ballot Review Sheet(LIs)_r2.pdf5441_Ballot Review Sheet(LIs)_r2.pdf
Line Item 1This line item includes all changes in Section 2.6 of Table 1 (including addition of two new footnotes), in ¶¶ 6.6 through 6.6.3.4 including rearrangement of Tables 3 through 11, and in ¶ R4-7.5 as well as removal of Appendix 3 and addition of Related Information 2.Passed
Line Item 2This line item includes only removal of § 7Passed as balloted (Super clean)
Line Item 3This line item includes all other changes in the document. (See ¶¶ 2.1, 3.1, R3-3.1, R4-7.6 (Note 1), R4-7.7 (including removal of Note 6), and Footnote 3; §§ A1-1, A2-1, A2-2, A3-1, R3-1, and R4-1.)Passed as balloted (Super clean)
5448Revision of SEMI MF1528-0308, Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass SpectrometryPassed as balloted (Super clean)5448_Ballot Review Sheet_SuperClean.pdf5448_Ballot Review Sheet_SuperClean.pdf
5449Reapproval of SEMI MF1049-0308, Practice for Shallow Etch Pit Detection on Silicon WafersPassed as balloted (Super clean)5449_Ballot Review Sheet_SuperClean.pdf5449_Ballot Review Sheet_SuperClean.pdf
5451Reapproval of SEMI MF1366-0308, Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass SpectrometryPassed as balloted (Super clean)5451_Ballot Review Sheet SuperClean.pdf5451_Ballot Review Sheet SuperClean.pdf
5313BLine Item Revisions of SEMI MF1535-0707, Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave ReflectanceSee below.5313B_Ballot Review Sheet_LIs_r1.pdf5313B_Ballot Review Sheet_LIs_r1.pdf
Line Item 1Changes to ¶1.3Failed
Line Item 2Renumbering of certain paragraphs and notes in §2 Scope, and correction to Note 1Failed
Line Item 3Addition of ¶3.8 and reference 7Failed
Line Item 4Corrections in ¶¶4.1, 5.1, 6.1.2, 6.1.3, 6.4, 7.2, 8.4, 11.3.2, and 13.1.6, Footnote 9, and the caption of Figure 3, and addition of reference 16 in §14Failed
Line Item 5Changes to Appendix 1Failed
Line Item 6Changes to Related Information 1Failed
Line Item 7Changes to Related Information 2Failed
Line Item 8Changes to Related Information 3Failed
5389Revision to MF1982-1110, Test Method for Analyzing Organic Contaminants on Silicon Wafer Surfaces by Thermal Desorption Gas ChromatographyFailed and turned to the Task Force for rework.5389_Ballot Review Sheet_r2.pdf5389_Ballot Review Sheet_r2.pdf
5424ALine Items Revision to SEMI M62-0912, Specifications for Silicon Epitaxial WafersSee below.5424A_Ballot Review Sheet_r2.pdf5424A_Ballot Review Sheet_r2.pdf
Line Item 1Revision of Tables R2-7 & R2-8 - Change ¶3-1.7Passed as balloted (Super clean)
Line Item 2Revision of Tables R2-7 & R2-8 - Change ¶3-2.7 and explanation #9Failed and turned to the Task Force for rework.
5450Revision to SEMI M49-0912, Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 22 nm Technology Generations with Title Change to: Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 16 nm Technology GenerationsFailed and turned to the Task Force for rework.5450_Ballot Review Sheet_r2.pdf5450_Ballot Review Sheet_r2.pdf


Ratification Ballot Results
None.

Activities Approved by the GCS between meetings of TC Chapter meeting
None.

Authorized Activities

Listing of all new TFOFs, SNARFs, and other activities approved by the committee.
#
Type
SC/TF/WG
Details
5542SNARFInternational Epitaxial Wafer Task ForceLine Items Revision to M62-0912, Specifications for Silicon Epitaxial Wafers
5541SNARFInternatinal SOI Task ForceRevision of SEMI M41-0707 Specification of Silicon-on-Insulator (SOI) for Power Device/ICs
5540SNARFInternational AWG Task ForceNew Auxiliary Information, Illustration of Flatness and Shape Metrics for Silicon Wafers
5539SNARFInternational AWG Task ForceRevision of SEMI MF1390-0707 (Reapproved 0512) ,Test Method for Measuring Warp on Silicon Wafers by Automated Non-Contact Scanning
5503Revised SNARFInternational Advanced Surface Inspection Task ForceLine Items Revision to SEMI M52-0912 Guide for Specifying Scanning Surface Inspection Systems for Silicon Wafers for the 130 nm to 11 nm Technology Generations (Re: To add M80 in reference)

Note, this is a revised SNARF approval.
TFOFJapan Test Method Task Force
Note: SNARFs and TFOFs are available for review on the SEMI Web site at:
http://downloads.semi.org/web/wstdsbal.nsf/TFOFSNARF

Authorized Ballots

Listing of documents approved by the committee for letter ballot.
#
When
SC/TF/WG
Details
5450ACycle 1, 2013International AWG Task ForceRevision to SEMI M49-0912, Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 22 nm Technology Generations with Title Change to: Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 16 nm Technology Generations
5430ACycle 1, 2013International AWG Task ForceRevision to SEMI M73-0309, Test Methods for Extracting Relevant Characteristics from Measured Wafer Edge Profiles


SNARF(s) Granted a One-Year Extension
None.

SNARF(s) Cancelled
None.

Standard(s) to receive Inactive Status
None.

Special Announcements of the Committee (Workshops, Programs, etc.)
Standards Technical Education Program (STEP): 450 mm Standards Overview was held on December 7th in conjunction with SEMICON Japan 2012.
The program chair was Shoji Komatsu / Acteon. Yukinori Murakami / Lintec, Tetsuya Nakai / SUMCO, Kaoru Naoi / Precision Industries, Akira Kashimoto / Shin-Etsu Polymer, Tsutomu Okabe / TDK and Sensho Kobayashi /TEL were the speakers.

Next Meeting
The next Japan Silicon Wafer committee meeting is held on 8th March, 2013 at JPR Bldg. 7F Conference Room 1, Tokyo, Japan.









Copyright © 2008 Semiconductor Equipment and Materials International (SEMI®).
All rights reserved.