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SEMI International Standards
Standards Locale: Japan
Committee: Silicon Wafer
Place of Meeting: SEMI Japan/ OVTCCM
Date of Meeting: 04/17/2026
Meeting End Date: 04/17/2026
Recording SEMI Standards Staff: Akiko Yoshida
CER Posted to Web: 05/01/2026
Leadership Changes

WG/TF/SC/TC Name
Previous Leader
New Leader
None
TC Chapter Structure Changes

Previous WG/TF/SC Name
New WG/TF/SC Name or Status Change
None
Ballot Results

Document #
Document Title
TC Chapter Action
A&R Forms for Approved Ballots
6570DNew Standard: Guide for Measuring Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers by a Laser-Scattering Tomography TechniquePassed with editorial changes6570D_Ballot Review.pdf6570D_Ballot Review.pdf
Note 1: Passed ballots and line items will be submitted to the ISC Audit & Review Subcommittee for procedural review.

Note 2: Failed ballots and line items were returned to the originating task forces for re-work and re-balloting or abandoning.


Ratification Ballot Results

Document #
Document Title
ISC A&R Action
A&R Forms
None
Note 1: Passed Ratification ballots will be submitted to SEMI publication for final processing.

Note 2: Failed Ratification ballots were returned to the originating task forces for re-work and re-balloting or abandoning.


Activities Approved by the GCS between meetings of TC Chapter meeting

#
Type
SC/TF/WG
Details
None
Authorized Activities
Listing of all revised or new SNARF(s) approved by the Originating TC Chapter.
#
Type
SC/TF/WG
Details
None
Note 1: SNARFs and TFOFs are available for review on the SEMI Web site at:

http://downloads.semi.org/web/wstdsbal.nsf/TFOFSNARF

Authorized Ballots
Listing of documents authorized by the Originating TC Chapter for Letter Ballot.
#
When
TF
Details
None
SNARF(s) Granted a One-Year Extension

#
TF
Title
Expiration Date
6570Int’l Test Method TFNew Standard: Guide for Measuring Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers by a Laser-Scattering Tomography Technique2027/04/19
6702Int’l Test Method TFRevision of M60: TEST METHOD FOR TIME DEPENDENT DIELECTRIC BREAKDOWN CHARACTERISTICS OF Amorphous SiO2 FILMS FOR Silicon WAFER EVALUATION2027/01/15


SNARF(s) Cancelled

#
TF
Title
7438Int’l Test Method TFLine-item Revision to SEMI M95-0925, TEST METHOD FOR NET CARRIER DENSITY AND RESISTIVITY OF SILICON EPITAXIAL LAYER BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH AN EVAPORATED METAL SCHOTTKY DIODE


Standard(s) to receive Inactive Status

Standard Designation
Title
None
Special Announcements of the Committee (Workshops, Programs, etc.)
None.

Next Meeting
The next meeting is scheduled for Friday, August 28, 2026 1:00 PM to 4:00 PM JST at SEMI Japan, Tokyo, Japan and via OVTCCM (Hybrid).









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