SEMI International Standards
Standards Locale: Japan
Committee: Silicon Wafer
Place of Meeting: TFT Building, Tokyo, Japan/ OVTCCM (Hybrid)
Date of Meeting: 12/18/2025
Meeting End Date: 12/18/2025
Recording SEMI Standards Staff: Akiko Yoshida
CER Posted to Web: 12/25/2025
Leadership Changes
WG/TF/SC/TC Name | Previous Leader | New Leader |
| Silicon Wafer Japan TC Chapter | Tetsuya Nakai (SUMCO) | Satoshi Akiyama (Nanoverse Technologies) |
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TC Chapter Structure Changes
Previous WG/TF/SC Name | New WG/TF/SC Name or Status Change |
| International Terminology TF | Tetsuya Nakai (SUMCO) stepped down from co-leader position. |
| International SOI Wafers TF | Tetsuya Nakai (SUMCO) stepped down from co-leader position. |
Ballot Results
Document # | Document Title | TC Chapter Action | A&R Forms for Approved Ballots |
| 7392 | Line Item Revision to SEMI M89-0721, Test Method for Recombination Lifetime of the Epilayer of the Silicon Epitaxial Wafer (p/p+, n/n+) by the Short Wavelength Excitation Microwave Photoconductive Decay Method |  |  7392_Ballot Review.pdf |
| Line Item 1 | To update JSNM information | Passed as balloted | |
| 7395 | Reapproval of SEMI M67-0720 - Test Method for Determining Wafer Near-Edge Geometry from a Measured Thickness Data Array Using the ESFQR, ESFQD, and ESBIR Metrics | Failed | |
| 7396 | Reapproval of SEMI M68-0720 - Test Method for Determining Wafer Near-Edge Geometry from a Measured Height Data Array Using a Curvature Metric, ZDD | Failed | |
| 6570C | New Standard: Guide for Measuring Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers by a Laser-Scattering Tomography Technique | Failed | |
Note 1: Passed ballots and line items will be submitted to the ISC Audit & Review Subcommittee for procedural review.
Note 2: Failed ballots and line items were returned to the originating task forces for re-work and re-balloting or abandoning.
Ratification Ballot Results
None.
Activities Approved by the GCS between meetings of TC Chapter meeting
None.
Authorized Activities
# | Type | SC/TF/WG | Details |
| 7437 | SNARF | Int’l Test Method TF | Revision to SEMI M85-0120, Guide for the Measurement of Trace Metal Contamination on Silicon Wafer Surface by Inductively Coupled Plasma Mass Spectrometry |
| 7438 | SNARF | Int’l Test Method TF | Line-item Revision to SEMI M95-0925, TEST METHOD FOR NET CARRIER DENSITY AND RESISTIVITY OF SILICON EPITAXIAL LAYER BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH AN EVAPORATED METAL SCHOTTKY DIODE |
| 7439 | SNARF | Int’l Test Method TF | Auxiliary Information:
BACKGROUND, RATIONALE, AND APPLICATION GUIDELINES FOR SEMI M95: TEST METHOD FOR NET CARRIER DENSITY AND RESISTIVITY OF SILICON EPITAXIAL LAYER BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH AN EVAPORATED METAL SCHOTTKY DIODE |
| 7434 | SNARF | Int’l Automated Advanced Surface Inspection TF | New Standard: Guide for AFM Roughness Measurement on Silicon Wafer Surfaces |
Note 1: SNARFs and TFOFs are available for review on the SEMI Web site at:
http://downloads.semi.org/web/wstdsbal.nsf/TFOFSNARF
Authorized Ballots
# | When | TF | Details |
| 6570D | Cycle 2, 2026 | Int’l Test Method TF | New Standard: Guide for Measuring Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers by a Laser-Scattering Tomography Technique |
| 7438 | Cycle 2, 2026 | Int’l Test Method TF | Line-item Revision to SEMI M95-0925, TEST METHOD FOR NET CARRIER DENSITY AND RESISTIVITY OF SILICON EPITAXIAL LAYER BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH AN EVAPORATED METAL SCHOTTKY DIODE |
SNARF(s) Granted a One-Year Extension
None.
SNARF(s) Cancelled
None.
Standard(s) to receive Inactive Status
None.
Special Announcements of the Committee (Workshops, Programs, etc.)
None.
Next Meeting
The next meeting is scheduled for Friday, April 17, 2026 13:00-16:00 at SEMI Japan, Tokyo, Japan and via OVTCCM (Hybrid).
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